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DG213
Quad Complementary CMOS Analog Switch
Features
D D D D D D D "22-V Supply Voltage Rating TTL and CMOS Compatible Logic Low On-Resistance--rDS(on): 45 W Low Leakage--ID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast Switching--tON: 85 ns
Benefits
D D D D D D D Low Charge Injection--Q: 1 pC Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Low Cost
Applications
D D D D D D Industrial Instrumentation Test Equipment Communications Systems Computer Peripherals Portable Instruments Sample-and-Hold Circuits
Description
The versatile DG213 analog switch has two NC and two NO switches. It can be used in various configurations, including four single-pole single-throw (SPST), two single-pole double-throw (SPDT), one "T" switch, one DPDT, etc. This device is fabricated in a Siliconix' proprietary high-voltage silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. This analog switch was designed for a wide variety of general purpose applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. These switches can handle up to "22 V, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup. All switches feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. For additional information, please refer to Application Note AN208.
Functional Block Diagram and Pin Configuration
DG213
Logic
IN1 D1 S1 V- GND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ 0 1
Truth Table SW1, SW4
OFF ON Logic "0" v 0.8 V Logic "1" w 2.4 V
SW2, SW3
ON OFF
Ordering Information
VL S3 D3 IN3 -40 to 85_C
Temp Range
Package
16-Pin Plastic DIP 16-Pin Narrow SOIC 16-Pin TSSOP
Part Number
DG213DJ DG213DY DG213DQ
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70662. Applications information may also be obtained via FaxBack, request document #70606.
Siliconix S-56461--Rev. C, 29-Dec-97
1
DG213
Absolute Maximum Ratings
Voltages Referenced to V- V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW 16-Pin TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C
Specifications
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Ranged Drain-Source On-Resistance rDS(on) Match Source Off Leakage Current Drain Off Leakage Current Drain On Leakage Current VANALOG rDS(on) DrDS(on) IS(off) ID(off) ID(on) VS = "14 V, VD = #14 V VD = "14 V, VS = #14 V VS = VD = 14 V VD = "10 V, IS = 1 mA , Full Room Full Room Room Full Room Full Room Full -0.5 -5 -0.5 -5 -0.5 -10 V- 45 1 "0.01 "0.01 "0.02 V+ 60 85 2 0.5 5 0.5 5 0.5 10 nA V W
D Suffix
-40 to 85_C
Symbol
V+ V = 15 V, V- = -15 V VV 15 VL = 5 V, VIN = 2.4 V, 0.8 Ve
Tempa
Minc
Typb
Maxc
Unit
Digital Control
Input Voltage High Input Voltage Low Input Current Input Capacitance VINH VINL IINH or IINL CIN VINH or VINL Full Full Full Room -1 5 2.4 0.8 1 mA pF V
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injection Source-Off Capacitance Drain-Off Capacitance Channel On Capacitance Off Isolation Channel-to-Channel Crosstalk tON tOFF tD Q CS(off) CD(off) CD(on) OIRR XTALK VS = 2 V See Figure 2 S Fi VS = 10 V, See Figure 3 CL = 1000 pF, Vg= 0 V, Rg = 0 W VS = 0 V f = 1 MHz V, VD = VS = 0 V, f = 1 MHz CL = 15 pF, RL = 50 W p, VS = 1 VRMS, f = 100 kHz kH Room Room Room Room Room Room Room Room Room 20 85 55 25 1 5 5 16 90 95 dB pF pC 130 100 ns
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Siliconix S-56461--Rev. C, 29-Dec-97
DG213
Specifications
Test Conditions Unless Otherwise Specified Parameter Power Supply
Positive Supply Current Negative Supply Current Logic Supply Current Power Supply Range for Continuous Operation I+ VIN = 0 or 5 V I- IL VOP Room Full Room Full Room Full Full "3 -1 -5 1 5 "22 V 1 5 mA
D Suffix
-40 to 85_C
Symbol
V = 15 V, V- = -15 V VV 15 V+ VL = 5 V, VIN = 2.4 V, 0.8 Ve
Tempa
Minc
Typb
Maxc
Unit
Specifications for Unipolar Supply
Test Conditions Unless Otherwise Specified Parameter Analog Switch
Analog Signal Ranged Drain-Source On-Resistance VANALOG rDS(on) VD = 3 V, 8 V, IS = 1 mA Full Room Full V- 90 V+ 110 140 V W
D Suffix
-40 to 85_C
Symbol
V+ V = 12 V, V- = 0 V VV VL = 5 V, VIN = 2.4 V, 0.8 Ve
Tempa
Minc
Typb
Maxc
Unit
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injection tON tOFF tD Q VS = 8 V See Figure 2 S Fi DG213 Only, See Figure 3 CL = 1 nF, Vgen= 6 V, Rgen = 0 W Room Room Room Room 50 125 45 80 4 pC 200 100 ns
Power Supply
Positive Supply Current Negative Supply Current Logic Supply Current Power Supply Range for Continuous Operation I+ VIN = 0 or 5 V I- IL VOP Room Full Room Full Room Full Full )3 -1 -5 1 5 )40 V 1 5 mA
Notes: a. Room = 25_C, Full = as determined by the operating temperature suffix. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function.
Siliconix S-56461--Rev. C, 29-Dec-97
3
DG213
Typical Characteristics
rDS(on) vs. VD and Power Supply Voltages
110 rDS(on) - Drain-Source On-Resistance ( W ) 100 90 80 70 60 50 40 30 20 10 -20 -16 -12 -8 -4 0 4 8 12 16 20 VD - Drain Voltage (V) "20 V "10 V "15 V "5 V rDS(on) - Drain-Source On-Resistance ( W ) 100 90 80 70 60 50 40 30 20 10 0 -15 -10 -5 0 5 10 15 125_C 85_C 25_C -55_C
rDS(on) vs. VD and Temperature
V+ = 15 V V- = -15 V
VD - Drain Voltage (V)
300 rDS(on) - Drain-Source On-Resistance ( W ) 250 200 150 100 50 0
rDS(on) vs. VD and Single Power Supply Voltages
5V V- = 0 V VL = 5 V I S, I D - Current (pA)
Leakage Currents vs. Analog Voltage
40 30 20 10 0 -10 -20 -30 -40 -20 IS(off), ID(off) V+ = 22 V V- = -22 V TA = 25_C ID(on)
7V 10 V 12 V
0
2
4
6
8
10
12
-15
-10
-5
0
5
10
15
20
VD - Drain Voltage (V)
VANALOG - Analog Voltage (V)
Leakage Current vs. Temperature
1 nA V+ = 15 V V- = -15 V VS, VD = "14 V Q - Charge (pC) I S, I D - Current 100 pA 30 20 10 0 -10 -20 1 pA -55 -35
QS, QD - Charge Injection vs. Analog Voltage
V+ = 15 V V- = -15 V
IS(off), ID(off) 10 pA
V+ = 12 V V- = 0 V
-15
5
25
45
65
85
105 125
-30 -15
-10
-5
0
5
10
15
Temperature (_C)
VANALOG - Analog Voltage (V)
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Siliconix S-56461--Rev. C, 29-Dec-97
DG213
Typical Characteristics (Cont'd)
Off Isolation vs. Frequency
120 110 100 OIRR (dB) 90 80 70 60 50 40 10 k RL = 50 W V+ = +15 V V- = -15 V
100 k
1M
10 M
f - Frequency (Hz)
Schematic Diagram (Typical Channel)
V+ VL Level Shift/ Drive INX V- V+ DX GND V- SX
Figure 1.
Test Circuits
+15 V
V+ VS = +2 V S IN 3V GND V- RL 300 kW CL 35 pF D VO
Logic Input
3V 50% 0V tOFF 90% tr <20 ns tf <20 ns
Switch Output -15 V VO = VS RL RL + rDS(on)
VO tON
Figure 2. Switching Time
Siliconix S-56461--Rev. C, 29-Dec-97
5
DG213
Test Circuits (Cont'd)
+5 V +15 V Logic Input VL VS1 VS2 S1 IN1 S2 IN2 GND V-
RL2 300 kW
3V 50% 0V VS1 VO1
V+ D1 D2 VO2
VO1 Switch Output
RL1 1 kW
90%
CL1 35 pF Switch Output
0V VS2 VO2 0V
90% tD tD
CL2 35 pF
-15 V CL (includes fixture and stray capacitance)
Figure 3. Break-Before-Make
C +15 V C VS V+ VS Rg = 50 W 0V, 2.4 V IN GND V- C RL NC 0V, 2.4 V C = RF bypass XTALK Isolation = 20 log VS VO S D VO Rg = 50 W IN1 0V, 2.4 V S2 IN2 GND Off Isolation = 20 log VS VO -15 V S1 V+
+15 V
D1 50 W D2 VO RL V- C
-15 V
Figure 4. Off Isolation
Figure 5. Channel-to-Channel Crosstalk
+15 V Rg V+ S IN 3V GND V- D VO CL 1000 pF INX ON VO
DVO
Vg
OFF
ON
-15 V
DVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x DVO
Figure 6. Charge Injection
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Siliconix S-56461--Rev. C, 29-Dec-97
DG213
Applications
+15 V
+5 V
-15 V
VIN1 VOUT
CMOS Logic Input Select High = VIN1 Low = VIN2
VIN2
-15 V
CMOS Logic Gain Select High = 10x Low = 1 x 10x 1x GND 20 kW 180 kW -15 V
DG213
Figure 7. Low Power Non-Inverting Amplifier with Digitally Selectable Inputs and Gain
Siliconix S-56461--Rev. C, 29-Dec-97
7

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